Polysilicon Source-Gated Transistors for Mixed-Signal Systems-on-Panel
نویسندگان
چکیده
The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic circuits are examined practically and via numerical simulations. In current mirror circuits made using thin-film technology, significant advantages are observed for SGT implementations. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the SGT version can operate at a lower voltage and has larger output dynamic range for a given device geometry. The results are explained in relation to the saturation mechanisms of the SGT and are supported by experimental measurements of polysilicon devices.
منابع مشابه
Polysilicon Thin-Film Source-Gated Transistors for Mixed Signal Large Area Electronics
...................................................................................................................ii Declaration .............................................................................................................iii Acknowledgments ................................................................................................... iv List of publications .................
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تاریخ انتشار 2011